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cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 1/13 MTC6601G6 cystek product specification n- and p-channel enhancement mode mosfet MTC6601G6 n-ch p-ch bv dss 30v -30v i d 3.7a(v gs =10v) -3a(v gs =-10 v) 44m (v gs =10v) 76m (v gs =-10v) 50m (v gs =4.5v) 94m (v gs =-4.5v) r dson ( typ .) 70m (v gs =2.5v) 130m (v gs =-2.5v) description the MTC6601G6 consists of a n-channel and a p- channel enhancement-mode mosfet in a single tsop-6 package, providing the designer with the be st combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the tsop-6 package is universally preferred for a ll commercial-industrial surface mount applications. features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline MTC6601G6 tsop-6 g gate s source d drain g1 s2 g2 d1 s1 d2
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 2/13 MTC6601G6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 30 -30 v gate-source voltage v gs 12 12 v t a =25 c ,v gs =10v(n-ch), v gs =-10v(p-ch) i d 3.7 -3 a continuous drain current (note 1) t a =70 c, v gs =10v(n-ch), v gs =-10v(p-ch) i d 2.9 -2.4 a pulsed drain current (note 2) i dm 20 -20 a total power dissipation (note 1) pd 1.14 w operating junction and storage temperature tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 110 c/w thermal resistance, junction-to-case rth,jc 60 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec; 180 c/w when mounted on minimum copper pad. 2. pulse width limited by maximum junction temperature. n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0, i d =250 a v gs(th) 0.5 1 1.2 v v ds =v gs , i d =250 a i gss - - 100 na v gs =12v, v ds =0 i dss - - 1 v ds =30v, v gs =0 i dss - - 25 a v ds =24v, v gs =0, tj=70c - 44 65 v gs =10v, i d =3a - 50 70 v gs =4.5v, i d =3a *r ds(on) - 70 95 m v gs =2.5v, i d =2a *g fs - 6.5 - s v ds =5v, i d =3a dynamic ciss - 506 - coss - 31 - crss - 30 - pf v ds =15v, v gs =0, f=1mhz *t d(on) - 5 - *t r - 7 - *t d(off) - 18 - *t f - 8 - ns v ds =15v, i d =1a, v gs =4.5v, r g =6 *qg - 5.1 - *qgs - 1 - *qgd - 1.3 - nc v ds =15v, i d =3a, v gs =4.5v source-drain diode *v sd - 0.79 1.2 v v gs =0v, i s =1a *trr - 12 - ns *qrr - 6 - nc i s =3a, v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 3/13 MTC6601G6 cystek product specification p-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0, i d =-250 a v gs(th) -0.5 -0.8 -1.2 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =12v, v ds =0 i dss - - -1 v ds =-30v, v gs =0 i dss - - -10 a v ds =-24v, v gs =0, tj=70 c - 76 100 v gs =-10v, i d =-2.3a - 94 120 v gs =-4.5v, i d =-2a *r ds(on) - 130 160 m v gs =-2.5v, i d =-1a *g fs - 6 - s v ds =-5v, i d =-2.3a dynamic ciss - 495 - coss - 43 - crss - 40 - pf v ds =-15v, v gs =0, f=1mhz *t d(on) - 5 - *t r - 9 - *t d(off) - 19 - *t f - 11 - ns v dd =-15v, i d =-1a, v gs =-4.5v, r g =6 *qg - 6 - *qgs - 0.9 - *qgd - 1.8 - nc v ds =-15v, i d =-2.5a, v gs =-4.5v source-drain diode *v sd - -0.82 -1.2 v v gs =0v, i s =-1a *trr - 26 - ns *qrr - 16 - nc i s =-2.5a, v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTC6601G6-0-t1-g tsop-6 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 4/13 MTC6601G6 cystek product specification n-channel typical characteristics typical output characteristics 0 4 8 12 16 20 012345 v ds , drain-source voltage(v) i d , drain current(a) v gs =2v v gs =3v 10v, 9v, 8v, 7v, 6v, 5v, 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =2.5v v gs =1.8v v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =3a r ds( on) @tj=25c :43m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =3a
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 5/13 MTC6601G6 cystek product specification n-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a single pulse power rating, junction to ambient 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =110c/w gate charge characteristics 0 1 2 3 4 5 0123456 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =15v i d =3a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s ta=25c, tj=150c, v gs =10v, r ja =110c/w single pulse r ds( on) limited maximum drain current vs junctiontemperature 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =110c/w
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 6/13 MTC6601G6 cystek product specification n-channel typical characteristics(cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =11 0c/w
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 7/13 MTC6601G6 cystek product specification p-channel typical characteristics typical output characteristics 0 4 8 12 16 20 012345 -v ds , drain-source voltage(v) -i d , drain current (a) 10v 9v 8v 7v 6v -v gs =3v -v gs =2v -v gs =4v -v gs =5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-2.5v v gs =-1.8v v gs =-4.5v v gs =-10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-10v, i d =-2.3a r ds( on) @tj=25c : 76m -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-2.3a
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 8/13 MTC6601G6 cystek product specification p-channel typical characteristics(cont .) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) ,normalized threshold voltage i d =-250 a single pulse power rating, junction to ambient 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =110c/w gate charge characteristics 0 1 2 3 4 5 012345678 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-15v i d =-2.5a maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =110c/w maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) r ds( on) limited 100 s 1ms 10ms 100ms t a =25c, tj=150c, v gs =-10v, r ja =110c/w single pulse dc
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 9/13 MTC6601G6 cystek product specification p-channel typical characteristics(cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) v ds =-5v pulsed ta=25c transient thermal response curves 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =110 c/w
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 10/13 MTC6601G6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 11/13 MTC6601G6 cystek product specification carrier tape dimension
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 12/13 MTC6601G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c813g6 issued date : 2012.09.17 revised date : 2012.11.21 page no. : 13/13 MTC6601G6 cystek product specification tsop-6 dimension inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1063 0.1220 2.70 3.10 g 0 0.0039 0 0.10 b 0.1024 0.1181 2.60 3.00 h - 0.0098 - 0.25 c 0.0551 0.0709 1.40 1.80 i 0.0047 ref 0.12 ref d 0.0748 ref 1.90 ref j 0.0177 ref 0.45 ref d1 0.0374 ref 0.95 ref k 0.0236 ref 0.60 ref d2 0.0374 ref 0.95 ref l 0 10 0 10 e 0.0118 0.0197 0.30 0.50 m - 0.0433 - 1.10 f 0.0276 0.0394 0.70 1.00 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead :pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 6-lead tsop-6 plastic surface mounted package cystek package code: g6 style: pin 1. gate1 (g1) pin 2. source2 (s2) pin 3. gate2 (g2) pin 4. drain2 (d2) pin 5. source1 (s1) pin 6. drain1 6601 device name date code ( d1 )

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